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Deep-UV DUXERIT Epitaxial Susceptor
  • Deep-UV DUXERIT Epitaxial SusceptorDeep-UV DUXERIT Epitaxial Susceptor
  • Deep-UV DUXERIT Epitaxial SusceptorDeep-UV DUXERIT Epitaxial Susceptor

Deep-UV DUXERIT Epitaxial Susceptor

Semicorex est magna fabrica et elit Siliconis Carbide Coated Graphite Susceptor in Sinis. Fuimus opificem et elit of Deep-UV LED Susceptor Epitaxialis per multos annos. Producta nostra bona pretia commoditatis habent et maxime mercatus Europae et Americanae tegunt. Expectamus ad longum tempus socium in Sinis fieri.

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Deep-UV LED Susceptores epitaxiales essentiales sunt ad fabricam LED. Semicorex pii carbide (SiC) -coated lammina altae qualitatis altae UV laganas efficaciores fabricare faciunt. SiC Coing est densa, gerunt obsistens pii carbide (SiC) coating. Princeps corrosionis et caloris resistentiae proprietates necnon conductivity scelerisque praestantes habet. SiC in bracteis graciles super graphite applicamus utentem vaporum chemicorum depositionis (CVD) processus.
Quaenam utilitas specifica tua sit, optimam solutionem cognoscemus pro epitaxy MOCVD necnon semiconductoris et industriae ductus.
Deep-UV noster Susceptor Epitaxial DUXERIT destinatur ad optimam laminae gasi fluens exemplum consequendum, aequabilitatem de profile scelerisque procurando. Hoc adiuvat ne quis contagione vel immunditiae diffusionem praestet, ut summus qualitas incrementi epitaxialis in lagano chip.
Contactus nos hodie ut plura discamus de susceptore nostro Deep-UV LED Epitaxial.


DUXERIT Epitaxial Susceptor parametri

Specificationes principales de CVD-SIC Coating .

Sic-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm

3.21

duritia

Vickers duritia

2500

Frumenti Size

μm

2~10

Puritas chemica

%

99.99995

Calor Capacity

J kg-1 K-1

640

Sublimatio Temperature

2700

Fortitudo Felix

MPa (RT 4-punctum)

415

Modulus

Gpa (4pt bend, 1300℃)

430

Scelerisque Expansion (C.T.E)

10-6K-1

4.5

Scelerisque conductivity

(W/mK)

300


Features of deep-UV DUXERIT Epitaxial Susceptor

- inferior necem declinatio et superior chip cedit
- Tam graphite substratum et carbide pii stratum altum scelerisque conductivity habent, et caloris excellentia proprietates distributio.
- Arctius dimensionis tolerances ducunt ad altiorem productum cede ac minora costs
- Vitare DECORTICATIO et curare coating in omnibus superficies
Temperatus oxidationis resistentiae: Stabilis temperaturis calidis usque ad 1600°C
Alta puritas: facta per CVD depositionem vaporis chemici sub condiciones chlorinationis caliditas.
Corrosio resistentia: durities alta, superficies densa et particulae minutissimae.
Corrosio resistentia: acidum, alcali, sal et reagentia organica.




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