Home > Products > Pii Carbide Coated > DUXERIT Epitaxial Susceptor > Deep-UV DUXERIT Epitaxial Susceptor
Deep-UV DUXERIT Epitaxial Susceptor
  • Deep-UV DUXERIT Epitaxial SusceptorDeep-UV DUXERIT Epitaxial Susceptor
  • Deep-UV DUXERIT Epitaxial SusceptorDeep-UV DUXERIT Epitaxial Susceptor

Deep-UV DUXERIT Epitaxial Susceptor

Semicorex est magna fabrica et elit Siliconis Carbide Coated Graphite Susceptor in Sinis. Fuimus opificem et elit of Deep-UV LED Susceptor Epitaxialis per multos annos. Producta nostra bona pretia commoditatis habent et maxime mercatus Europae et Americanae tegunt. Expectamus ad longum tempus socium in Sinis fieri.

Mitte Inquisitionem

depictio producti

Deep-UV LED Susceptores epitaxiales essentiales sunt ad fabricam LED. Semicorex pii carbide (SiC) -coated lammina altae qualitatis altae UV laganas efficaciores fabricare faciunt. SiC Coing est densa, gerunt obsistens pii carbide (SiC) coating. Princeps corrosionis et caloris resistentiae proprietates necnon conductivity scelerisque praestantes habet. SiC in bracteis bracteis applicamus super graphite utendo depositioni vaporum chemicorum (CVD) processu.
Quaenam utilitas specifica tua sit, optimam solutionem perspiciemus pro epitaxy MOCVD necnon semiconductoris et industriae ductus.
Deep-UV noster Susceptor Epitaxial DUXERIT destinatur ad optimam laminae gasi fluens exemplar consequendum, aequabilitatem profile scelestae procurans. Hoc iuvat ne quis contagione vel immunditiae diffusionem praestet, ut incrementum epitaxialis summus qualitas super spumam laganum.
Contactus nos hodie ut plura discamus de susceptore nostro Deep-UV LED Epitaxial.


DUXERIT Epitaxial Susceptor parametri

Specificationes principales de CVD-SIC Coating

Sic-CVD Properties

Crystal Structure

FCC phase

Densitas

g/cm

3.21

duritia

Vickers duritia

2500

Frumenti Size

m

2~10

Puritas chemica

%

99.99995

Calor Capacitas

J·kg-1 ·K-1

640

Sublimatio Temperature

2700

Fortitudo Felix

MPa (RT 4-punctum)

415

Youngâ s Modulus

Gpa (4pt bend, 1300â)

430

Scelerisque Expansion (C.T.E)

10-6K-1

4.5

Scelerisque conductivity

(W/mK)

300


Features of deep-UV DUXERIT Epitaxial Susceptor

- inferioris esse deviationis ac superior chip cedit
- Tam graphite substrato et carbide pii strato altam conductivity scelerisque habent, ac proprietates excellentes caloris distributio.
- Arctius dimensionis tolerances ducunt ad altiorem productum cede ac minora costs
- Vitare DECORTICATIO et curare coating in omnibus superficies
Temperatus oxidationis resistentiae: Stabilis temperaturis calidis usque ad 1600°C
Alta puritas: facta per CVD depositionem vaporis chemici sub condiciones chlorinationis caliditas.
Corrosio resistentia: durities alta, superficies densa et particulae minutissimae.
Corrosio resistentia: acidum, alcali, sal et reagentia organica.




Hot Tags: Deep-UV DUXERIT Epitaxial Susceptor, Sinis, Manufacturers, Suppliers, Factory, Lorem, Mole, Provectus, Durabilis

Related Categoria

Mitte Inquisitionem

Libenter placet, ut inquisitionem tuam in forma infra exhibeas. Respondebimus tibi in 24 horis.

Related Products

We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept