Tac iactaret cruce in sic crystallus incrementum

In annis,Tac iactaretCrucibles facti sunt momenti technica solution ut reaction vasa in incrementum processus Silicon carbide (sic) crystallis. Tac materiae facti clavem materiae in agro Silicon carbide crystallum incrementum debitum ad optimum chemical corrosio resistentia et altum temperatus stabilitatem. Comparari cum Traditional Graphite Crucibus, Tac Tacitus Crucibles providere magis firmum incrementum environment, reducere impulsum graphite corrosio, extend in ministerium vitae, ita reducendo vitare in microtubes.

 Fig.1 sic crystallum incrementum

Commoda et experimentalem analysis de Tac-iactaret cruces

In hoc studium, ut comparari incrementum de Silicon carbide crystallis per traditum graphite cruces et graphite cruces iactaret cum Tac. Eventus ostendit quod Tac-iactaret cruces significantly amplio qualis est crustals.

Fig.2 Om Image of Sic Ingot crevit per Pvt modum

Figura II illustrat quod Silicon Carbide Crystals crevit in Traditional Graphite Crucibus Display Concle Concle interface, dum illa crevit in Tac-iactaret cruces, exhibent convexa interface. Praeterea, sicut videtur in Figura III, in ore Polycrystalline Phaenomenon est pronuntiata in crystallum crevit usura traditional graphite cruces, cum usum Tac-iactaret cruciabilia efficaciter mitigat hoc exitus.

Et analysis indicat quodTac coatingSuscitabit temperatus ad extremum in cruce, ita reducendo incrementum rate of crystallis in illa regio. Praeterea, in Tac coating prohibet directum contactus inter graphite partem murum et cristallum, quod adjuvat mitigare nucleation. Haec factores collective reducere verisimilitudo polycrystalliny res ad marginibus crystal.

Fig.3 OM imagines aquarum diversis incrementum gradus

Ceterum in Silicon Carbide Crystals crevit inTac-iactaretCRUCULENS exhibitum fere non ipsum encapsulation, a communi causa micropipe defectus. Qua de causa, haec crystallis demonstrabo a significant reductionem in micropipe defectum density. Corrosio test results presented in Figura IV Confírma, quod Crystals crevit in Tac-iactaret cruces habere virtualiter non micropipe defectus.

Fig.4 Om Image Post Koh Etching

CRYSTALIS Quality et Impuritatem Imperium

Through GDMS and Hall tests of crystals, the study found that the Ta content in the crystal increased slightly when TaC coated crucibles were used, but the TaC coating significantly limited the ingress of nitrogen (N) doping into the crystal. In summary, Tac iactaret cruces potest crescere Silicon carbide crystallis cum altior qualis, praesertim in reducendo defectus density (maxime microtubes et carbonis encapsulation) et continuanden doping concentration.

High-qualitas offert semicorexTac-iactaret Graphite CrucibleNam sic crystallum incrementum. Si vos have ullus inquisitione aut opus additional details, placere non dubitant ad adepto in tactus nobiscum.

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