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Quod Scelerisque Annealing

Quod Scelerisque Annealing

Processus furnum, etiam Thermal Annealing notus, gradus crucialis est in fabricandis semiconductoribus.

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Cur Utere Purgatio Ultrasonic in Semiconductor Vestibulum

Cur Utere Purgatio Ultrasonic in Semiconductor Vestibulum

Cum lagana purgatio, ultrasonica purgatio et purgatio megasonica consueverunt ad removendas particulas e superficie lagani.

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Study de Distribution of Resistentia Electrical in n-Type 4H-SiC Crystal

Study de Distribution of Resistentia Electrical in n-Type 4H-SiC Crystal

4H-SiC, ut materia tertia-generationis semiconductoris, late fascia, alta conductivity scelerisque, et optimae stabilitatis chemicae et scelestae, magni pretii facit et applicationes altae frequentiae.

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Quid est Crystal Incrementum Fornacis System

Quid est Crystal Incrementum Fornacis System

Unius fornacis incrementum crystallum constituitur ex sex praecipuis systematibus quae concorditer operantur ad incrementum efficientis et qualitatem crystalli.

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Infineon retegit primum 300mm potentia GaN Wafer

Infineon retegit primum 300mm potentia GaN Wafer

Nuper Infineon Technologies prosperum progressionem primi 300mm potentiarum mundi Gallium Nitride (GaN) laganum technologiam nuntiavit.

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Monocrystallina Vestibulum Silicon

Monocrystallina Vestibulum Silicon

Tres primariae methodi in fabricandis siliconis monocrystallini adhibitae sunt methodus Czochralski (CZ), methodus Kyropoulos et methodus Float Zonae (FZ).

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