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SiC Coated RTP Portitorem Tab pro Epitaxial Augmentum

SiC Coated RTP Portitorem Tab pro Epitaxial Augmentum

Semicorex SiC Coated RTP Portitorem Plate pro Incremento Epitaxialis est perfecta solutio pro applicationibus lagani semiconductoris processus. Cum eius qualitate susceptores carbonis graphite et vicus uasculae a MOCVD processit in superficie graphite, ceramici, etc., hoc productum est specimen lagani tractandi et processui epitaxialis incrementi. Tabellarius SiC obductis efficit ut princeps scelerisque conductivity et calor excellentium proprietates distribuat, eam facit certam electionem pro RTA, RTP, vel dura chemica purgatio.

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Noster SiC Coated RTP Portitorem Plat pro Epitaxial Augmentum destinatur ad condiciones depositionis environment durissimas sustinere. Cum magno eius calore et corrosione resistente, susceptores epitaxia subiciuntur perfectae depositionis ambitus incrementi epitaxialis. Pulchra SiC crystallis efficiens in ferebat superficie leni et altam firmitatem contra chemica purgatio efficit, dum materia machinata est ne rimas et delaminationem sustineat.
Contactus nos hodie ut plura discamus de nostro SiC Coated RTP Portitore Plate Epitaxial Augmentum.


Parametri Sic Coated RTP Portitorem Tab pro Epitaxial Augmentum

Specificationes principales de CVD-SIC Coating .

Sic-CVD Properties

Crystal Structure

FCC β phase

Densitas

g/cm

3.21

duritia

Vickers duritia

2500

Frumenti Size

μm

2~10

Puritas chemica

%

99.99995

Calor Capacity

J kg-1 K-1

640

Sublimatio Temperature

2700

Fortitudo Felix

MPa (RT 4-punctum)

415

Modulus

Gpa (4pt bend, 1300℃)

430

Scelerisque Expansion (C.T.E)

10-6K-1

4.5

Scelerisque conductivity

(W/mK)

300


Features of Sic Coated RTP Portitorem Tab pro Epitaxial Augmentum

Princeps munditiae SiC graphite linivit
Superior calor resistentia & scelerisque uniformitatem
SiC crystal obductis ad superficiem levem
Princeps firmitatem contra chemica purgatio
Materia designata est ut rimas et delaminationes non fiant.





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