ICP Plasma Etching System

Tabellarius semicorex SiC Coated pro ICP Plasma Etching System est certa et sumptus efficax solutio pro lagano processuum tractandi summus temperatus sicut epitaxy et MOCVD. Nostri portitores notam subtilitatem SiC crystalli efficiens quae superior caloris resistentiam praebet, etiam scelerisque uniformitatem, et resistentiam chemicam durabilem.

Mitte Inquisitionem

depictio producti

Summam qualitatem epitaxy et MOCVD processibus consequi cum tabellario Semicorex SiC Coated pro ICP Plasma Etching System. Productum nostrum specialiter his processibus machinatur, offerens resistentiam superiorem calorem et corrosionem. Nostri tenuis SiC crystallis efficiens praebet superficiem mundam et levem, admittens pro lagana optimal tractationem.
Contactus nos hodie ut plura discamus de tabellario nostro SiC Coated pro ICP Plasma Etching System.

Parametri Sic Coated carrier pro ICP Plasma Etching System

Specificationes principales de CVD-SIC Coating .
Sic-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm	3.21
duritia	Vickers duritia	2500
Frumenti Size	μm	2~10
Puritas chemica	%	99.99995
Calor Capacity	J kg-1 K-1	640
Sublimatio Temperature	℃	2700
Fortitudo Felix	MPa (RT 4-punctum)	415
Modulus	Gpa (4pt bend, 1300℃)	430
Scelerisque Expansion (C.T.E)	10-6K-1	4.5
Scelerisque conductivity	(W/mK)	300