Quid eligam liquidam periodum epitaxy methodi?

Proprietates singulares SIC provocant ut singula crystalla crescant. Incrementum conventionalis methodi adhibitae in industria semiconductoris, ut rectae methodi tendentis et uasculi descendentis, applicari non possunt ob absentiam Si:C=1:1 liquidam periodum in pressione atmosphaerica. Processus incrementi pressionem maiorem quam 105 atm et temperaturam quam 3200°C altiorem requirit, ut rationem stoichiometricam Si:C=1:1 obtineat in solutione, ut per calculi theoretici.

Cum methodo PVT comparata, methodus liquida phase crescendi SiC sequentia commoda habet:

1. low dislocation density. the problem of dislocations in SiC substrates has been the key to constrain the performance of SiC devices. Penetrating dislocations and microtubules in the substrate are transferred to the epitaxial growth, increasing the leakage current of the device and reducing the blocking voltage and breakdown electric field. On the one hand, the liquid-phase growth method can significantly reduce the growth temperature, reduce the dislocations caused by thermal stress during cooling down from the high-temperature state, and effectively inhibit the generation of dislocations during the growth process. On the other hand, the liquid-phase growth process can realize the conversion between different dislocations, the Threading Screw Dislocation (TSD) or Threading Edge Dislocation (TED) is transformed into stacking fault (SF) during the growth process, changing the propagation direction, and finally discharged into the layer fault. The propagation direction is changed and finally discharged to the outside of the crystal, realizing the decrease of dislocation density in the growing crystal. Thus, high-quality SiC crystals with no microtubules and low dislocation density can be obtained to improve the performance of SiC-based devices.

2. Facile intellegitur maiorem quantitatem subiectam esse. PVT methodus, debita temperatura transversali difficilis est moderari, simulque status gasi status in sectione transversali difficilis est distributio temperaturae stabilis formare, quo maior diametri, quo longior tempore corona, eo difficilior est. ad imperium, sumptus itemque tempus magnum consumptio est. Methodus liquida-phase permittit ad expansionem diametri simplicis relative per technicam emissionem scapulae, quae adiuvat ut maiora celeriter subiectae consequantur.

3. P-typus crystallorum praeparari potest. Methodus liquida-phase ob pressionis incrementi altae, temperatura relative humilis est, et sub Al conditionibus facile non est volatilizare et amittere, methodus liquida-phasma utens solutione fluxa cum additione Al facilior ad altam obtinendam. tabellarius concentrationis P-type crystallis SiC. PVT modus est summus in temperatus, in P-type parameter facile volatilise est.

Similiter methodus liquoris-phasmatis etiam nonnullas difficultates difficilis respicit, ut sublimationem fluxus in calidis temperaturis, abstinentia immunditiae concentratio in crystallo crescente, involutio fluxa, fluitantia formationis crystalli, residua metalla in co-solvente, et proportio. de C: Si stricte regenda at 1, 1, et aliae difficultates.