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Industria News
Munus crucial of Epitaxial Stratorum in semiconductoris machinae
Incrementum epitaxiale refertur ad processum crescendi in strato monocrystallino monocrystallino subiecto crescendi. Communiter, incrementum epitaxiale involvit culturam strati cristallini in uno-crystal subiecto, cum increvit iacuit communicans eandem orientationem crystallographicam sicut substrat......
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Surge et Outlook of Silicon Carbide (SiC) Power Fabrica Market
Cum global acceptatio vehiculorum electricorum paulatim augetur, Silicon Carbide (SiC) nova incrementa in proximo decennio occurret. Praevidetur fabricatores virtutis semiconductores et operatores in industria autocineti acrius in constructione huius sectoris catenae valoris participent.
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Doping Imperium in Sublimatione SiC Augmentum
Silicon carbide (SiC) magni ponderis munus agit in electronicis potentiae fabricandis et in machinis frequentia summus ob egregias electricas et thermas proprietates. Qualitas et doping gradus crystallorum SiC directe afficiunt ad fabricam perficiendam, tam accurata moderatio dopingis una est e tech......
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