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SiC-Coated Susceptor Ferocactus in Epitaxial Reactor Cubiculum

Semicorex's SiC-Coated Susceptor Barrel pro Cubiculo Reactoris Epitaxialis est valde certa solutio pro processibus fabricandis semiconductoris, featuring caloris superioris distributionis ac proprietatibus scelerisque conductivity. Est etiam valde repugnant corrosioni, oxidationis, et caliditatum.

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Semicorex's SiC-Coated Susceptor Barrel pro Cubiculo Reactoris Epitaxialis est productum quale premium, fabricatum ad signa summa praecisiones et durabilitas. Optimum scelerisque conductivity, corrosionem resistentiae praebet, et maxime aptum est epitaxiali reactori in fabricandis semiconductoribus.
Nostrum SiC-Coated Susceptor Barrel pro Cubiculo Reactoris Epitaxialis destinatur ad optimam laminae gasi fluens exemplar consequendum, aequabilitatem scelestae profile procurans. Hoc adiuvat ne quis contagione vel immunditiae diffusionem praestet, ut summus qualitas incrementi epitaxialis in lagano chip.
Contactus nos hodie ut plura discamus de nostro SiC-Coated Susceptore Barrel pro Cubiculo Reactoris Epitaxial.

Parametri SiC-Coated Susceptor Ferocactus in Epitaxial Reactor Cubiculi

Specificationes principales de CVD-SIC Coating .
Sic-CVD Properties
Crystal Structure	FCC β phase
Densitas	g/cm	3.21
duritia	Vickers duritia	2500
Frumenti Size	μm	2~10
Puritas chemica	%	99.99995
Calor Capacity	J kg-1 K-1	640
Sublimatio Temperature	℃	2700
Fortitudo Felix	MPa (RT 4-punctum)	415
Modulus	Gpa (4pt bend, 1300℃)	430
Scelerisque Expansion (C.T.E)	10-6K-1	4.5
Scelerisque conductivity	(W/mK)	300

Features of Sic-Coated Susceptor Ferocactus in Epitaxial Reactor Cubiculum

- Tum graphite substrato et carbidi pii strato densitatem bonam habent et bonam munus tutelae in cultura caliditatis ac mordax operandi ambitibus ludere possunt.

- Silicon carbide obductis susceptoribus adhibitis pro incremento crystalli unius habet praealtissimae superficiei planiciem.

- Reducere differentiam in expansione scelerisque coëfficientis inter graphite substrato et carbide pii strato, efficaciter meliores compages vires ne crepuit et delaminatio.

- Tam graphite substratum et carbide pii stratum altum scelerisque conductivity habent, et caloris excellentia proprietates distributio.

- Maximum punctum liquescens, caliditas oxidationis resistentia, corrosio resistentia.