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Silicon Carbide SiC Coated Ferocactus Susceptor
  • Silicon Carbide SiC Coated Ferocactus SusceptorSilicon Carbide SiC Coated Ferocactus Susceptor
  • Silicon Carbide SiC Coated Ferocactus SusceptorSilicon Carbide SiC Coated Ferocactus Susceptor
  • Silicon Carbide SiC Coated Ferocactus SusceptorSilicon Carbide SiC Coated Ferocactus Susceptor
  • Silicon Carbide SiC Coated Ferocactus SusceptorSilicon Carbide SiC Coated Ferocactus Susceptor
  • Silicon Carbide SiC Coated Ferocactus SusceptorSilicon Carbide SiC Coated Ferocactus Susceptor

Silicon Carbide SiC Coated Ferocactus Susceptor

Semicorex primarius sine possessore opificem Siliconis Carbide SiC Coated Barrel Susceptor, Subsecutio Machinatum Maximum Puritatis Graphite positam in Graphite Silicon Carbide Coated, Silicon Carbide Ceramico, MOCVP areae semiconductoris fabricandi. Nostra Silicon Carbide SiC Coated Barrel Susceptor bonum pretium commodo pretium habent et multa mercatus Europae et Americanae operiunt. Expectamus ad longum tempus socium in Sinis fieri.

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SemicorexPii Carbide SiC Coated Ferocactus Susceptorproductum est graphite altum purgatum SiC obductis, quae magno calore et corrosione resistit. LPE aptum est. ThePii CarbideSiC Coated Barrel Susceptor usus est in processibus quae epixialem iacuit in lagana semiconductoris formant, quae altam conductivity scelerisque, et proprietates excellentes caloris distributio.

Contactus nos hodie ut plura de nostro discamusPii CarbideSiC Coated Barrel Susceptor.


Morbi laoreetPii Carbide SiC CoatedBarrel Susceptor

Specificationes principales de CVD-SIC Coating .

Sic-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm

3.21

duritia

Vickers duritia

2500

Frumenti Size

μm

2~10

Puritas chemica

%

99.99995

Calor Capacity

J kg-1 K-1

640

Sublimatio Temperature

2700

Fortitudo Felix

MPa (RT 4-punctum)

415

Modulus

Gpa (4pt bend, 1300℃)

430

Scelerisque Expansion (C.T.E)

10-6K-1

4.5

Scelerisque conductivity

(W/mK)

300


Features ofPii Carbide SiC CoatedBarrel Susceptor

- Tum graphite substrato et carbidi pii strato densitatem bonam habent et bonam munus tutelae in cultura caliditatis ac mordax operandi ambitibus ludere possunt.

- Silicon carbide obductis susceptoribus adhibitis pro incremento crystalli unius habet praealtissimae superficiei planiciem.

- Reducere differentiam in expansione scelerisque coëfficientis inter graphite substrato et carbide pii strato, efficaciter meliores compages vires ne crepuit et delaminatio.

- Tam graphite substratum et carbide pii stratum altum scelerisque conductivity habent, et caloris excellentia proprietates distributio.

- Maximum punctum liquescens, caliditas oxidationis resistentia, corrosio resistentia.




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