Semicorex est magna fabrica et elit Siliconis Carbide Coated Graphite Susceptor in Sinis. Intendunt in industrias semiconductores sicut strata carbida pii et epitaxy semiconductor. Noster Gas Inlet Ring pro Semiconductor Equipment bonum pretium commodum habet et multa mercatus Europae et Americanae operit. Expectamus ad longum tempus socium in Sinis fieri.
Semicorex Gas Inlet Ring for Semiconductor Equipment is SiC Coated, quod est densum, obsistens carbide Pii (SiC) efficiens. Princeps corrosionis et caloris resistentiae proprietates necnon conductivity scelerisque praestantes habet. SiC in bracteis bracteis applicamus super graphite utendo depositioni vaporum chemicorum (CVD) processu.
Noster Gas Inlet Ring pro Semiconductor Equipment destinatur ad optimam laminae gasi fluens exemplar consequendum, aequabilitatem de profile scelerisque procurando. Hoc iuvat ne quis contagione vel immunditiae diffusionem praestet, ut incrementum epitaxialis summus qualitas super spumam laganum.
Contactus nos hodie ut plura discamus de nostro Gas Inlet Ringo pro Equipment Semiconductoris.
Parametri Gas Inlet Ring pro Semiconductor Equipment
Specificationes principales de CVD-SIC Coating . |
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Sic-CVD Properties |
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Crystal Structure |
FCC β phase |
|
Density |
g/cm |
3.21 |
duritia |
Vickers duritia |
2500 |
Frumenti Size |
μm |
2~10 |
Puritas chemica |
% |
99.99995 |
Calor Capacity |
J kg-1 K-1 |
640 |
Sublimatio Temperature |
℃ |
2700 |
Fortitudo Felix |
MPa (RT 4-punctum) |
415 |
Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Scelerisque Expansion (C.T.E) |
10-6K-1 |
4.5 |
Scelerisque conductivity |
(W/mK) |
300 |
Features Gas Inlet Ring pro Semiconductor Equipment
Maximum puritatis SiC graphite linivit
Superior calor resistentia & scelerisque uniformitatem
teres SiC crystal obductis ad superficiem levem
High vetustatem contra chemical purgatio
● Materia designata est ut rimas ac delaminationes non fiant.