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News
Silicon Carbide Ion Implantation and Annealing Process
In tradito Pii potentia fabrica fabricatio, temperatura diffusio et ion implantatio principales modi sunt ad dopant imperium, singuli cum suis commodis et incommodis. Typice, summus temperatus diffusio propria simplicitate, cost-efficentia, isotropica dopantarum distributionum profiles notatur, et d......
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Epitaxial Strati: Fundatio Provectus Semiconductor Fabrica
In industria semiconductoris, stratis epitaxialis munus cruciale agunt formando membranas tenues singulas crystallinas super laganum subiectum, collective notum lagana epitaxialis. Praesertim carbidi pii (SiC) epitaxiales stratis substratis conductivis SiC effectis lagana epitaxialia homogenea SiC f......
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Rara Graphite pro Sic Crystal Denuo
In statu, plerique SiC fabricatores substrati fabricant novum uasculum thermarum campi processus designandi cum graphitis graphitis raris: ponentes altam puritatem SiC particulam rudis materiae inter murum graphite rotundum et graphite cylindricum rari, dum totum uasculum altius auget ac diametrum a......
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Munus crucial of Epitaxial Stratorum in semiconductoris machinae
Incrementum epitaxiale refertur ad processum crescendi in strato monocrystallino monocrystallino subiecto crescendi. Communiter, incrementum epitaxiale involvit culturam strati cristallini in uno-crystal subiecto, cum increvit iacuit communicans eandem orientationem crystallographicam sicut substrat......
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