> Products > Wafer > SiC Substratum > IV "VI" High Munditia Semi-Insulating SiC Ingot

Products

New Products

IV "VI" High Munditia Semi-Insulating SiC Ingot

Semicorex puritatem altam praebet semiinsulatam SiC regulam cum 4 digitis et 6 unc. Fabrica et lagana multos annos fuimus. Noster 4" 6" High Purity Semi-Insulating SiC Ingot has good price utili and cover most of the European and American markets. Expectamus ad longum tempus socium in Sinis fieri.

Mitte Inquisitionem

depictio producti

Noster 4" 6" High Purity Semi-Insulating SiC Ingot has good price utili and cover most of the European and American markets. Expectamus ad longum tempus socium in Sinis fieri.

IV Inch Semi-insulating SiC Ingot Specification
Items	Productio Grade	Dummy Grade
Polytypus	4H
Resistentia/olim ·cm	QUOD'
Diameter	100.25±0.25 mm
Crassitudo	≥15 mm
Superficiem sexualis errore	0±0.2°
Prima plana propensionis	[1- 100]±5.0°
Prima plana longitudo	32.5±1.5 mm
Secundarium plana	90.0° CW e ± 5.0°, pii faciem sursum
Secundarium planae longitudinis	17±1.5 mm
Micropipe density	≤1 ea/cm2	≤10 ea/cm2
Ora Cracks	≤3 of，≤1mm/ea	≤5 of，≤3mm/ea
Polytypus areis	Nullus	≤5% area
ora indents	≤3 ea，≤1mm latum et profundum	≤5 ea，≤2mm latum et profundum
Label	C-face
Packaging	unit-ungot cassette vacuum packaging

VI Inch Semi-insulating SiC Ingot Specification
Items	Productio Grade	Dummy Grade
Polytypus	4H
Resistentia/olim ·cm	QUOD'
Diameter	150.25±0.25 mm
Crassitudo	≥10 mm
Superficiem sexualis errore	0±0.25°
SCARIFICATIO orientationis	[1- 100]±5.0°
SCARIFICATIO profundum	1~1.25 mm
Micropipe density	≤1 ea/cm2	≤10 ea/cm2
Ora Cracks	≤3 of，≤1mm/ea	≤5 of，≤3mm/ea
Polytypus areis	Nullus	≤5% area
ora indents	≤3 ea，≤1mm latum et profundum	≤5 ea，≤2mm latum et profundum
Label	C-face
Packaging	unit-ungot cassette vacuum packaging