VI Inch Semi-Insulating HPSI SiC Wafer

Semicorex varias praebet unctas 4H et 6H SiC. Fabrica et elit carbidi Pii per multos annos fuimus. Nostra duplex expolitur 6 Inch Semi-Insulating HPSI SiC Wafer bonum pretium commodum habet ac plurimas mercatus Europae et Americanae tegunt. Expectamus ad longum tempus socium in Sinis fieri.

Mitte Inquisitionem

depictio producti

Semicorex integram carbidam silicon (SiC) lagani productam lineam, inclusis 4H et 6H substratam cum N-typo, P-type et lagana semi-insulating alta puritatis, possunt esse cum vel sine epitaxy.

Diameter 6 unciae nostrae 6 Inch Semi-Insulating HPSI SiC Wafer magnam aream superficiei praebet ad fabricandas potentias electronicas cogitationes sicut MOSFETs, Schottky Diodes, et alia applicationes altae intentionis. 6 Inch Semi-Insulating HPSI SiC Wafer maxime adhibitum est in 5G communicationibus, systematibus radar, ductu capitis, satellitibus communicationibus, warplanis et aliis campis, cum emolumentis identitatis RF amplificandi, identitatis ultra-longae, anti-jamming et altae. -speed, summus capacitas informationum applicationum transferendi, consideratur maxime idealis subiecta ad fabricandas proin potentias machinas.

Formularium:

Diameter: 6″

-Duplex-politus

Gradus: Productio, Research, Dummy

4H-SiC HPSI Wafer

● Crassitudo: 500±25 μm

● Micropipe densitas: ≤1 ea/cm²~ ≤15 ea/cm²

Items	Productio	Inquisitionis	phantasma
Crystal Parameters
Polytypus	4H
Superficiem directio in-axis	<0001>
Superficiem orientationis off-axis	0±0.2°
(0004) FWHM	≤45arcsec	≤60arcsec	≤1OOarcsec
Electrical Parameters
Type	HPSI
Resistentia	≥1 E8ohm·cm	% area > 1 E5ohm·cm	70% area > 1 E5ohm·cm
Mechanica Parameters
Diameter	150±0.2 mm
Crassitudo	500±25 μm
Prima plana propensionis	[1-100] ± 5° vel Notch
Prima longitudo plana / profundum	47.5± 1.5mm vel 1 - 1.25mm
TTV	≤5 μm	≤10 μm	≤15 μm
LTV	≤3 μm(5mm*5mm)	≤5 μm(5mm*5mm)	≤10 μm(5mm*5mm)
Arcum	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤35 μm	≤45 μm	≤55 μm
Frons (Si-face) asperitas (AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm²	≤10 ea/cm²	≤15 ea/cm²
Inclusio density carbonis	≤1 ea/cm²	QUOD'
Hexagonal inanis	Nullus	QUOD'
Metallum immunditiae	≤5E12atoms/cm²		QUOD'
Ante Quality
Front	And
Superficiem metam	Si-face CMP
Particulas	≤60ea/laganum (size≥0.3μm)	QUOD'
Exasperat	≤5ea/mm. Cumulativo longitudo ≤Diameter	Cumulativus length≤300mm	QUOD'
Orange cortices / foveas / maculas / striations / rimas / contagione	Nullus		QUOD'
Ora eu / indents / fractura / hex p	Nullus
Polytypus areis	Nullus	Cumulativo area≤20%	Cumulativo area≤30%
Ante laser vestigium	Nullus
Back Quality
Retro metam	C-faciem CMP
Exasperat	≤5ea/mm,Cumulative length≤2*Diameter	QUOD'
Retro defectus (ore eu / indents)	Nullus
Retro asperitatem	Ra≤0.2nm (5μm*5μm)
Back laser notati	"SEMI"
Ore
Ore	Chamfer
Packaging
Packaging	Epi-paratum in vacuo packaging Multi laganum cassette packaging
*Nota "NA" nullum significat petitionem Items not mentioned may refer to SEMI-STD.