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IV Inch High Puritas Semi-Insulating HPSI SiC Duplex latus politum laganum Substratum

Semicorex varias praebet unctas 4H et 6H SiC. Fabrica et lagana subiecta multos annos fabrica fuimus. Nostra 4 Inch High Purity Semi-Insulating HPSI SiC Duplex latus politum Wafer Substratum bonum pretium commodum habet et maxime mercatus Europae et Americanae obtegunt. Expectamus ad longum tempus socium in Sinis fieri.

Mitte Inquisitionem

depictio producti

Semicorex integram carbidam silicon (SiC) lagani productam lineam, inclusis 4H et 6H substratam cum N-typo, P-type et lagana semi-insulating alta puritatis, possunt esse cum vel sine epitaxy.

Introducendo nostram aciem sectionis 4 Inch High Purity Semi-Insulating HPSI SiC Duplex latus politum Wafer Substratum, top-of-linea producto destinatum ad postulandas postulationes electronicarum et semiconductorium applicationum provectorum.

4 Inch High Purity Semi-Insulating HPSI SiC Duplex latus politum Wafer Substratum maxime adhibetur in communicationibus 5G, systematibus radar, ductu capitis, satellitibus communicationibus, warplanis et aliis agris, commoda amplificandi RF range, ultra longi temporis intervallum. identificatio, anti-jamming et summus celeritas, summus capacitas informationum translationis et aliarum applicationum, consideratur maxime idealis subiectum pro Proin potentiae cogitationibus faciendis.

Formularium:

Diameter: 4″

Geminus-politus

l Grade: Productio, Investigatio, Donec

4H-SiC HPSI Wafer

● Crassitudo: 500±25 μm

●l Micropipe densitas: ≤1 ea/cm²~ ≤10 ea/cm²

Items	Productio	Inquisitionis	phantasma
Crystal Parameters
Polytypus	4H
Superficiem directio in-axis	<0001>
Superficiem orientationis off-axis	0±0.2°
(0004) FWHM	≤45arcsec	≤60arcsec	≤1OOarcsec
Electrical Parameters
Type	HPSI
Resistentia	≥1 E9ohm·cm	% area > 1 E5ohm·cm	70% area > 1 E5ohm·cm
Mechanica Parameters
Diameter	99.5 - 100mm
Crassitudo	500±25 μm
Prima plana propensionis	[1-100]±5°
Prima plana longitudo	32.5±1.5mm
Secundarium plana positione	90° CW a primo plano ± 5°. Pii faciem sursum
Secundarium planae longitudinis	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	QUOD'
Arcum	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Frons (Si-face) asperitas (AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm²	≤5 ea/cm²	≤10 ea/cm²
Inclusio density carbonis	≤1 ea/cm²	QUOD'
Hexagonal inanis	Nullus	QUOD'
Metallum immunditiae	≤5E12atoms/cm²		QUOD'
Ante Quality
Front	And
Superficiem metam	Si-face CMP
Particulas	≤60ea/laganum (size≥0.3μm)	QUOD'
Exasperat	≤2ea/mm. Cumulativo longitudo ≤Diameter	Cumulative length≤2*Diameter	QUOD'
Orange cortices / foveas / maculas / striations / rimas / contagione	Nullus		QUOD'
Ora eu / indents / fractura / hex p	Nullus
Polytypus areis	Nullus	Cumulativo area≤20%	Cumulativo area≤30%
Ante laser vestigium	Nullus
Back Quality
Retro metam	C-faciem CMP
Exasperat	≤5ea/mm,Cumulative length≤2*Diameter	QUOD'
Retro defectus (ore eu / indents)	Nullus
Retro asperitatem	Ra≤0.2nm (5μm*5μm)
Back laser notati	I mm (a summo ore)
Ore
Ore	Chamfer
Packaging
Packaging	Sacculus interior nitrogeni repletus est, et sacculus exterior vacuumedtur. laganum multi-reta epi-parata.
*Nota "NA" nullum significat petitionem Items not mentioned may refer to SEMI-STD.

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