SIC SIC SIC SIC SICMOREX et continue eiciam ad altiorem perficientur et inferioribus industria industria ad altiorem perficientur et inferioribus industria, ut core materiam pro agentibus industria conversionem. Semicoreex products sunt repulsi per technicae innovation, et committitur ad providing customers cum certa materia solutions et operantes cum sociis ad definias novam era viridi industria. *
N-type semicorexSIC subiectaSunt altus-finem lacus products developed secundum tertiam-generation lata bandgap semiconductor materiae, disposito in occursum stregrine requisitis summus temperatus, summus frequency, summus potentia et summus efficientia electronic cogitationes. Through advanced crystal growth technology and precision processing technology, our N-type SiC substrates have excellent electrical properties, thermal stability and surface quality, providing ideal basic materials for the manufacture of power devices (such as MOSFET, diodes), RF devices and optoelectronic devices, and promoting breakthrough innovations in new energy, electric vehicles, 5G communications and industrial power commeatus.
Comparari cum Silicon, secundum semiconductors, lata bandgap semiconductors per Silicon carbide et Gallium Nitride sunt praestantes perficientur commoda ex materia finis ad fabrica finem. Habent characteres summus frequency, princeps efficientiam, princeps potentia, altum voltage resistentia et caliditas resistentia. Sunt enim momenti directionem ad progressionem de semiconductor industria in futurum. Inter eos, n-genus sic in SIC subiecta exhibet unique corporalis et eget proprietatibus. In altum BandGap Width, High naufragii Electric Field Field, High Electron Satiration PERFLUO rate et excelsum scelerisque conductivity de Silicon carbide faciunt ludere a vitalis partes in applications ut potentia electronic cogitationes. Haec characteres dant silicon carbide significant commoda in altus-perficientur applicationem agros ut EV et photovoltaics, praesertim secundum stabilitatem et diuturnitatem. N-type sic in SIC subiecta lata foro applicationem potentiale in potentia Semiconductor cogitationes, radio frequency semiconductor cogitationes et emergentes applicationem agris. SIC subiecta potest esse late in potentia semiconductor cogitationes, radio frequency semiconductor cogitationes, et downstream products ut optical Waveguides, tf, vidit Filtra, et calor in cmponents. Pelagus applicationem Industries includit EV, photovoltaic et industria repono systems, potentia grids, rail translationem, communications, ai specula, etc.
Virtus semiconductor cogitationes sunt semiconductor cogitationes ut switches et rectifiers in potentia electronic products. Power Siconductor cogitationes maxime includit potestatem Diodes, potestate TRIIO, Thyristors, MOSFETS, IGIGNTS, etc.
Cruise range, præcipientes celeritate et driving experientia sunt magna factores ad EV. Comparari cum Traditional Silicon-fundatur potentia Semiconductor cogitationes ut Silicon-fundatur IGBTS, N-Type SIC SIC SIGNUM SICBTUDUCOR cogitationes habere significant commoda ut humilis on-resistentia, et excelsum frequency conductivity. Hae commoda efficaciter reducere industria damnum in virtute conversionem link; Reducere volumine passiva components ut inductors et capacitors, reducere pondus et sumptus virtutis modulorum; Redigendum calor dissipationem requisita, simpliciorem scelerisque administratione systems, et amplio dynamic responsio motricium imperium. Iterum melius cruisare range, accusans celeritate, et driving experientia in ev. Silicon carbide potentia semiconductor cogitationes potest applicari ad varietate components of EV, comprehendo motricium agitet, in-tabula phialas (obcs), DC / DC Converters, Aeris Conditioning Compresses, High Voltage PTC Heaters, et pre-præcepi, pre-intentione PTC, et pre-pre-intentione PTC, et pre-pre-intentione PTC, et pre-præcipe, pre-intentione PTC et pre-pre-intentione PTC, et pre-pre-intentione PTC heaters et pre-præcipiens res PTC, et pre-pre-intentione PTC heaters, et pre- præcipiens seipes. At present, silicon carbide power devices are mainly used in motor drives, OBCs and DC/DC converters, gradually replacing traditional silicon-based IGBT power modules: In terms of motor drives, silicon carbide power modules replace traditional silicon-based IGBTs, which can reduce energy loss by 70% to 90%, increase vehicle range by 10%, and support high power output in high temperature environments. In terms of OBC, potestas moduli potest convertere externum AC potentia in DC potestatem arguere altilium. Et Silicon carbide potentia modulus potest reducere damnum præcipiens per XL%, consequi citius accusans celeritate, et amplio user experientia. In terms of DC / DC Converters, eius munus est ut convertat ad DC potentia ad summus intentione altilium in humilis-voltage DC potentia ad usum per-tabula cogitationes. Et Silicon carbide potentia moduli amplio efficientiam a reducing calor et reducing industria damnum a LXXX% ad XC%, obscuratis in ictum in vehiculum range.